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FCX605

ISSUE 2 - SEPTEMBER 2005

120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

SUMMARY

DESCRIPTION

This new NPN Darlington transistor provides users with very efficeint

performance combining low V

(sat) and very high Hfe to give extremely low

on state losses at 120V operation. This makes it deal for use in a variety of

efficient driving functions including motors, lamps relays and solenoids and

will also benefit circuits requiring high output current switching.

FEATURES

• Low Saturation Voltage

• Hfe min 2K @ 1A

• I

= 1A Continuous

• SOT89 package with Plot 1W

• Specification is also available in Eline and SOT223 package outlines

APPLICATIONS

• Various driving functions

- Lamps

- Motors

- Relays and solenoids

• High output current switches

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

FCX605TA 7 12mm embossed 1000 units

DEVICE MARKING

605

Top View

SOT 89

CEO

=120V; V

CE(sat)

= 1V; I

= 1A

Summary of content (5 pages)

PAGE 1
FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE(sat)= 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low on state losses at 120V operation. This makes it deal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching.
PAGE 2
FCX605 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT NPN UNIT Collector-Base Voltage V CBO 140 V Collector-Emitter Voltage V CEO 120 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 4 A Continuous Collector Current IC 1 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.
PAGE 3
FCX605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 140 V I C =100␮A V (BR)CEO 120 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 10 V I E =100␮A Collector Cut-Off Current I CBO 100 nA V CB =10V 10 µA V CB = 120V Tamb = 100°C Emitter Cut-Off Current I EBO 0.
PAGE 4
FCX605 NPN TYPICAL CHARACTERISTICS 1.8 -55 C +25 C +100 C +175 C 1.4 2.5 hFE - Gain normalised to 1 Amp VCE(sat) - (Volts) 1.6 1.2 IC/IB=100 1.0 0.8 0.6 0.4 0.2 0 0.01 1 10 VCE=5V 2.0 1.5 1.0 0.5 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.2 -55 C +25 C +100 C +175 C 2.0 1.8 1.8 1.6 1.4 1.2 IC/IB=100 1.0 1.6 1.4 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.01 10 -55 C +25 C +100 C 2.
PAGE 5
FCX605 PACKAGE DIMENSIONS PAD LAYOUT DETAILS 2.4 4.0 1.5 1.2 1.0 3.2 1.2 SOT89 pattern. PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.