User Manual

DXT5401
Document number: DS31226 Rev. 3 - 2
1 of 5
www.diodes.com
March 2010
© Diodes Incorporated
DXT5401
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXT5551)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.055 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-160 V
Collector-Emitter Voltage
V
CEO
-150 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current
I
C
-600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C (Note 3) P
D
1 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
R
θ
JA
125
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Top View Device Schematic Pin Out Configuration
4
3
2
1
C
C
B
E
3
1
2,4
BASE
COLLECTOR
EMITTE
R
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