Instruction Manual

DXT2010P5
Document number: DS32011 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
DXT2010P5
PowerDI is a registered trademark of Diodes Incorporated.
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
150 190
⎯
V
I
C
= 100μA
Collector-Emitter Breakdown Voltage (Note 7)
V
(
BR
)
CEO
60 80
⎯
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
7.0 8.1
⎯
V
I
E
= 100μA
Collector Cutoff Current
I
CBO
⎯
⎯
20
0.5
nA
μA
V
CB
= 120V
V
CB
= 120V, T
amb
= 100 °C
Collector Cutoff Current
I
CER
R≤1kΩ
⎯
⎯
20
0.5
nA
μA
V
CB
= 120V
V
CB
= 120V, T
amb
= 100 °C
Emitter Cutoff Current
I
EBO
⎯ ⎯
10 nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
⎯
20
45
50
100
210
30
60
70
135
260
mV
I
C
= 100mA, I
B
= 5mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
I
C
= 6A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 7)
V
BE
(
sat
)
⎯
1000 1100 mV
I
C
= 6A, I
B
= 300mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE
(
on
)
⎯
940 1050 mV
V
CE
= 1V, I
C
= 6A
DC Current Gain (Note 6)
h
FE
100
100
55
20
200
200
105
40
⎯
300
⎯
⎯
⎯
I
C
= 10mA, V
CE
= 1V
I
C
= 2A, V
CE
= 1V
I
C
= 5A, V
CE
= 1V
I
C
= 10A, V
CE
= 1V
Transition Frequency
f
T
⎯
130
⎯
MHz
I
C
= 100mA, V
CE
= 10V
f = 50MHz
Output Capacitance (Note 7)
C
obo
⎯
31
⎯
pF
V
CB
= -10A, f = 1MHz
Switching Times
t
on
t
off
⎯
⎯
42
760
⎯
⎯
ns
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= I
B2
= 100mA
Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.