User guide

DVR5V0W
Document number: DS30578 Rev. 6 - 2
3 of 5
www.diodes.com
July 2011
© Diodes Incorporated
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100 125
150
175
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P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0
(Note 4)
1
1,000
100
0.0001 .001 .01 1 10.1
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs.
Collector Current (NPN Transistor)
C
V = 1.0V
CE
1
100
10
0.1
1
10
100
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E (p
F
)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 3 Typical Output Capacitance vs.
Collector-Base Voltage (NPN Transistor)
CB
1
10
1,000
100
0.0001
.001
.01
.1 1
10
V,
(mV)
CE (SAT)
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE
I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector Saturation Voltage vs.
Collector Current (NPN Transistor)
C
V , ZENER VOLTAGE (V)
Fig. 5 Typical
Z
Zener Breakdown Characteristics