User guide

ManualsBrandsDiodes ManualsHardwareDVR5V0W

DVR5V0W

Document number: DS30578 Rev. 6 - 2

1 of 5

www.diodes.com

July 2011

DVR5V0W

COMPLEX ARRAY FOR VOLTAGE REGULATORS

Features

• Epitaxial Planar Die Construction

• Selectively Paired NPN Transistors & Zener Diodes for Series

Pass Voltage Regulator Circuits

• Ideally Suited for Automated Assembly Processes

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Device Packaging Shipping

DVR5V0W-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Pin Configuration

Top View

SOT363

VR04

VR04 = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: Y = 2011

M = Month ex: 9 = September

Summary of content (5 pages)

PAGE 1
DVR5V0W COMPLEX ARRAY FOR VOLTAGE REGULATORS Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Selectively Paired NPN Transistors & Zener Diodes for Series Pass Voltage Regulator Circuits Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Symbol Value Unit Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Symbol Value Unit VCBO 45 V VCEO 18 V VEBO 5 V IC 1 A Symbol Value Unit VF 0.
PAGE 3
200 1,000 150 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (Note 4) 100 50 VCE = 1.0V 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 1 200 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 10 1 0.1 0.0001 .001 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs.
PAGE 4
Sample Applications VCC = 6.0V R1 = 560R Q1 Vo(nom) = 5.0V Z1 R Load DVR5V0W Notes: Sample Application for DVR5V0W: R1= 560Ω VCC = 6.0V Vo(nom) = 5.0V IO = 100mA Iq(typical) = 0.5mA @ IO = 0mA Typical Vreg(load) = 0.2V from Io = 100mA to 0mA 7. Resistor R1 not included. 8. Typical performance shown is under setup and operating conditions specified in the sample applications. 9. Recommended VCC(min) ~ Vo(nom) + 1V. Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.
PAGE 5
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.