User guide

DSL12AW
Document Number: DS31644 Rev. 2 - 2
3 of 6
www.diodes.com
February 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSL12AW
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-12 -35
⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
BV
CEO
-12 -20
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5 -8.3
⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-1 -100 nA
V
CB
= -12V, I
E
= 0
Collector Cutoff Current
I
CES
⎯
-1 -100 nA
V
CE
= -12V, V
BE
= 0
Emitter Cutoff Current
I
EBO
⎯
-1 -100 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS
DC Current Gain (Note 5)
h
FE
100
100
100
175
165
160
⎯
300
⎯
V
V
CE
= -1.5V, I
C
= -0.5A
V
CE
= -1.5V, I
C
= -0.8A
V
CE
= -1.5V, I
C
= -1A
Collector-Emitter Saturation Voltage (Note 5)
V
CE(sat)
⎯
⎯
⎯
-70
-95
-115
-160
-235
-290
mV
I
C
= -0.5A, I
B
= -10mA
I
C
= -0.8A, I
B
= -16mA
I
C
= -1A, I
B
= -20mA
Collector-Emitter Saturation Resistance
R
CE
(
sat
)
⎯ ⎯
290 mΩ
I
C
= -1A, I
B
= -20mA
Base-Emitter Saturation Voltage
V
BE
(
sat
)
⎯ ⎯
-0.95 V
I
C
= -1A, I
B
= -20mA
Base-Emitter Turn On Voltage
V
BE
(
on
)
⎯ ⎯
-0.95 V
V
CE
= -1.5V, I
C
= -1A
Output Capacitance
C
obo
⎯ ⎯
65 pF
V
CB
= -1.5V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
180
⎯
MHz
V
CE
= -5V, I
C
= -100mA, f = 100MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
024 681012
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
50
100
150
200
250
300
350
400
450
500
0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
V = -1.5V
CE
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A