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DSL12AW

Document Number: DS31644 Rev. 2 - 2

1 of 6

www.diodes.com

February 2011

ADVANCE INFORMATION

DSL12AW

12V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Ultra Small Surface Mount Package

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• ESD rating: 400V-MM, 8KV-HBM

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information

Part Number Case Packaging

DSL12AW-7 SOT-363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Device Schematic

Top View

Pin Out Configuration

1, 2, 5, 6

123

654

ZPB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

ZPB

Summary of content (6 pages)

PAGE 1
DSL12AW Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra Small Surface Mount Package Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DSL12AW Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Value -12 -12 -5 -2 -3 Unit V V V A A Symbol PD RθJA PD RθJA TJ, TSTG Value 450 275 650 192 -55 to +150 Unit mW °C/W mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes:
PAGE 3
DSL12AW Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 5) Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO ICES IEBO -12 -12 -5 ⎯ ⎯ ⎯ -35 -20 -8.
PAGE 4
DSL12AW 500 0.14 450 VCE = -1V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.12 hFE, DC CURRENT GAIN T A = 150°C 350 300 TA = 85°C 250 T A = 25°C 200 150 100 T A = -55°C IC/IB = 10 0.10 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 50 0 0.001 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = -5V 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.
PAGE 5
DSL12AW Package Outline Dimensions ADVANCE INFORMATION A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DSL12AW Document Number: DS31644 Rev. 2 - 2 5 of 6 www.diodes.
PAGE 6
DSL12AW IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).