User guide

Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
100
nA
V
CB
= 50V, I
E
= 0
Collector-Base Cutoff Current
I
CBO
50
μA
V
CB
= 50V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current
I
EBO
100 nA
V
EB
= 5V, I
C
= 0
Collector-Emitter Cutoff Current
I
CES
100 nA
V
CE
= 50V, V
BE
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
50
V
I
C
= 100μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
50
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100μA
ON CHARACTERISTICS (Note 4)
300
V
CE
= 2V, I
C
= 0.1A
300
V
CE
= 2V, I
C
= 0.5A
300
700
V
CE
= 2V, I
C
= 1A
200
V
CE
= 2V, I
C
= 2A
DC Current Gain
h
FE
100
V
CE
= 2V, I
C
= 3A
38 80
I
C
= 0.5A, I
B
= 50mA
70 160
I
C
= 1A, I
B
= 50mA
130 280
I
C
= 2A, I
B
= 100mA
124 260
I
C
= 2A, I
B
= 200mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
180 370
mV
I
C
= 3A, I
B
= 300mA
Equivalent On-Resistance
R
CE(SAT)
62 130
mΩ
I
E
= 2A, I
B
= 200mA
1.1 V
I
C
= 2A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE(SAT)
1.2 V
I
C
= 3A, I
B
= 300mA
Base-Emitter Turn-on Voltage
V
BE(ON)
1.1 V
V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
100
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Output Capacitance
C
obo
25 pF
V
CB
= 10V, f = 1MHz
NEW PRODUCT
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
0
0.2
0.4
25 50
75
100 125
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
0.6
0.8
1.0
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
0123 4
5
DS31208 Rev. 4 - 2
2 of 4
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