User Manual

DNLS350E
Document number: DS31231 Rev. 3 - 2
2 of 5
www.diodes.com
April 2009
© Diodes Incorporated
DNLS350E
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
CBO
⎯ ⎯
100 nA
V
CB
= 50V, I
E
= 0
⎯ ⎯
50
μA
V
CB
= 50V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current
I
EBO
⎯ ⎯
100 nA
V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
50
⎯ ⎯
V
I
C
= 100μA
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
50
⎯ ⎯
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
5
⎯ ⎯
V
I
E
= 100μA
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
200
⎯ ⎯
⎯
V
CE
= 2V, I
C
= 0.5A
200
⎯ ⎯ V
CE
= 2V, I
C
= 1A
100
⎯ ⎯ V
CE
= 2V, I
C
= 2A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
90
mV
I
C
= 0.5A, I
B
= 50mA
⎯ ⎯
170
I
C
= 1A, I
B
= 50mA
⎯ ⎯
290
I
C
= 2A, I
B
= 200mA
Equivalent On-Resistance
R
CE
(
SAT
)
⎯
62 145
mΩ
I
E
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯ ⎯
1.2 V
I
C
= 2A, I
B
= 200mA
Base-Emitter Turn-on Voltage
V
BE
(
ON
)
⎯ ⎯
1.1 V
V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
100
⎯ ⎯
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Output Capacitance
C
obo
⎯ ⎯
30 pF
V
CB
= 10V, f = 1MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0.4
0.8
25 50
75
100 125
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
1.2
1.6
2.0
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
0123 45