Instruction Manual

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DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

1 of 6

www.diodes.com

October 2010

DMS3016SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

• DIOFET utilizes a unique patented process to monolithically

integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

DS(ON)

- minimizes conduction losses

• Ultra Low V

– enhanced to reduce losses due to body

diode conduction

• Low Q

- lower Q

of the integrated Schottky reduces body

diode switching losses

• Low gate capacitance (Q

) ratio – reduces risk of shoot-

through or cross conduction currents at high frequencies

• Avalanche rugged – I

and E

rated

• Lead Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.072 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMS3016SSSA-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Internal Schematic

Logo

Part no.

Year: “09” = 2009

Xth week: 01 ~ 53

1 4

8 5

S3016SA

Year: “10” = 2010

Summary of content (6 pages)

PAGE 1
DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Ultra Low VSD – enhanced to reduce losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross c
PAGE 2
DMS3016SSSA Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.5V Unit V V EAR Value 30 ±12 9.8 6.3 90 13 25.4 Symbol PD RθJA TJ, TSTG Value 1.54 81 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C Steady State ID Pulsed Drain Current (Note 5) Avalanche Current (Note 5) (Note 6) Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.
PAGE 3
DMS3016SSSA 30 30 VGS = 4.5V VGS = 3.5V 20 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 25 VGS = 3.0V 15 VGS = 2.5V 10 VDS = 5V 20 15 VGS = 150°C 10 VGS = 125°C VGS = 85°C 5 5 VGS = 25°C VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 0.04 VGS = 2.5V 0.02 VGS = 4.5V 0.01 VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 VGS = 4.5V ID = 10A 1.
PAGE 4
DMS3016SSSA 20 2.5 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.0 ID = 100mA 1.5 1.0 TA = 25°C 12 8 4 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMS3016SSSA r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R θJA(t) = r(t) * RθJA R θJA = 80°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 0.
PAGE 6
DMS3016SSSA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).