User guide

DMP58D0LFB
Document number: DS35206 Rev. 6 - 2
4 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP58D0LFB
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
0
0.5
1
1.5
2
2.
5
-50 -25 0 25 50 75 100 125
I = 1mA
D
150
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
0.05
0.1
0.15
0.2
0.25
0.3
0.4 0.6 0.8 1 1.2
T = 25°C
A
-I , LEAKAGE CURRENT (nA)
DSS
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
0 5 10 15 20 25 30
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
,
C
A
P
A
C
I
T
AN
C
E (pF)
T
0
5
10
15
20
25
30
35
-20-16-12-8-40
f = 1MHz
C
ISS
C
OSS
C
RSS
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.001
0.01
0.1
1
0.1 1 10 100
-I (A) @P =10s
DW
-I (A) @ DC
D
-I (A) @P =1s
DW
-I (A) @P =100ms
DW
-I (A) @P =10ms
DW
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)
-I (A) @P =1ms
DW
-I (A) @
P =10µs
D
W
-I (A) @P =100µs
DW