Instruction Manual

DMP4015SPS
Document number: DS35518 Rev. 9 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP4015SPS
NEW PRODUCT
POWERDI is a registered trademark of Diodes Incorporated
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
0
0.4
0.8
1.2
1.6
2
2.4
-I , SOURCE CURRENT (A)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0 5 10 15 20 25 30
f = 1MHz
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30
T =150°C
A
T =125°C
A
T =85°C
A
T =25°C
A
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V , GATE-SOURCE VOLTAGE (V)
GS
020406080100120
0.2 0.4 0.6 0.8 1.0
INDUCTOR (mH)
Fig. 12 Single-Pulse Avalanche Tested
0
10
20
30
40
50
60
70
80
90
I,AVALAN
C
HE
C
U
R
R
ENT (A)
AS
0
100
200
300
400
500
600
E, AVALA
N
C
H
E E
N
E
R
G
Y
(mJ)
AS
E
AS
I
AS
0.1 0.3 0.5 0.7 0.9
Starting Temperature (T ) = 25°C
J