Instruction Manual

DMP4015SPS
Document number: DS35518 Rev. 9 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP4015SPS
NEW PRODUCT
POWERDI is a registered trademark of Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-40 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-8.5
-6.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-13.0
-10.5
A
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-11.0
-8.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-17.0
-13.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-100 A
Maximum Body Diode Continuous Current (Note 7)
I
S
-3.5 A
Avalanche Current (Note 8)
I
AS
-22 A
Avalanche Energy (Note 8)
E
AS
242 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
96.4 °C/W
t<10s 40.6 °C/W
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
2.1
W
T
A
= +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θJA
55.0 °C/W
t<10s 24.0 °C/W
Thermal Resistance, Junction to Case (Note 7)
R
θJC
4.15 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-40
 
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
 
-1
µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
 
100
nA
V
GS
= 25V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS
(
th
)
-1.5 -2.0 -2.5 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)

7 11

mΩ
V
GS
= -10V, I
D
= -9.8A

9 15
V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance
|Y
fs
|

26

S
V
DS
= -20V, I
D
= -9.8A
Diode Forward Voltage
V
SD

-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss

4234

pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss

1036

Reverse Transfer Capacitance
C
rss

526

Gate Resistance
R
G

7.77

Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g

47.5

nC
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge
Q
g
s

14.2

Gate-Drain Charge
Q
g
d

13.5

Turn-On Delay Time
t
D
(
on
)

13.2

ns
V
GS
= -10V, V
DD
= -20V, R
G
= 6Ω,
I
D
= -1A, R
L
= 20Ω
Turn-On Rise Time
t
r

10.0

Turn-Off Delay Time
t
D
(
off
)

302.7

Turn-Off Fall Time
t
f

137.9

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.