Instruction Manual

DMP32D4S
Document number: DS35822 Rev. 4 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
ADVANCE INFORMATION
0.3
0.6
0.9
1.5
0
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(on)

1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J

Figure 7 On-Resistance Variation with Temperature
V= -10V
I= A
GS
D
-1.0
V=5V
I= A
GS
D
-4.
-500m
1.2
1.4
1.6
1.8
2.2
2.4
2.6
2.0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
1.0
2.0
0
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 25C
A

T= -55C
A

T= 85C
A

T= 125C
A

T= 150C
A

100
10
1
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
0
2
4
6
8
-V ,
G
ATE-S
O
U
R
C
E V
O
LTA
G
E (V)
GS
10
V = -10V
I= -1A
DS
D