User guide

ManualsBrandsDiodes ManualsHardwareDMP31D0UFB4

DMP31D0UFB4

atasheet number: DS35587 Rev. 1 - 2

1 of 7

www.diodes.com

January 2012

Product Line o

Diodes Incorporated

DMP31D0UFB4

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

Max R

DS(on)

Max I

@ T

= 25°C

-30V

1Ω @ V

= -4.5V

-0.76A

1.5Ω @ V

= -2.5V

-0.62A

2Ω @ V

= -1.8V

-0.54A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Load Switch in portable electronics

Features and Benefits

• Footprint of just 0.6mm

– thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 2KV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP31D0UFB4-7B P6 7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

Source

Gate

Protection

Diode

Gate

Drain

P6 = Product Type Marking Code

DMP31D0UFB4-7B

Top View

Bar Denotes Gate

And Source Side

Summary of content (7 pages)

PAGE 1
A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A 2Ω @ VGS = -1.8V -0.54A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 0.
PAGE 2
A Product Line of Diodes Incorporated DMP31D0UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (Note 5) Thermal Characteristics Unit V V ID -0.76 -0.55 -0.54 A IDM 2 A Value 0.46 0.
PAGE 3
A Product Line of Diodes Incorporated DMP31D0UFB4 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±3 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.
PAGE 4
A Product Line of Diodes Incorporated RDS(ON),DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 1.6 0 2 4 6 -VGS, GATE SOURCE VOLTAGE(V) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 8 1.7 1.4 VGS = -4.
PAGE 5
A Product Line of Diodes Incorporated DMP31D0UFB4 120 1.0 CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) f = 1MHz 0.8 0.6 0.4 0.2 100 80 Ciss 60 40 20 Coss 0 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 100,000 Crss 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 6
A Product Line of Diodes Incorporated DMP31D0UFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMP31D0UFB4 Datasheet number: DS35587 Rev. 1 - 2 6 of 7 www.diodes.
PAGE 7
A Product Line of Diodes Incorporated DMP31D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).