User guide

DMP3056LSS
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
±800
nA
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-1 1.7 -2.1 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
45
65
mΩ
V
GS
= -10V, I
D
= -6.0A
V
GS
= -4.5V, I
D
= -5.0A
Forward Transconductance
g
fs
⎯
8
⎯
S
V
DS
= -10V, I
D
= -5.3A
Diode Forward Voltage (Note 5)
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
722
⎯
pF
Output Capacitance
C
oss
⎯
114
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
92
⎯
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Gate Resistance
R
G
⎯
3.3
⎯ Ω
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Q
G
⎯
6.8
⎯
nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
Total Gate Charge
Q
G
⎯
13.7
⎯
Gate-Source Charge
Q
GS
⎯
1.6
⎯
Gate-Drain Charge
Q
GD
⎯
4.18
⎯
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
Turn-On Delay Time
t
d(on)
⎯
6.4
⎯
Rise Time
t
r
⎯
5.3
⎯
Turn-Off Delay Time
t
d(off)
⎯
26.5
⎯
Fall Time
t
f
⎯
14.7
⎯
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
NEW PRODUCT
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristics
0
1
2
3
4
5
6
7
8
9
10
11
12
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = -10V
GS
V = -4.5V
GS
V = -3.0V
GS
V = -2.5V
GS
V = -1.5V
V = -1.0V
GS
GS
Fig. 2 Typical Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
10
-V , GATE SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
1 1.5 2 2.5 3 3.5 4
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
Pulsed
DS
DMP3056LSS
Document number: DS31419 Rev. 6 - 2
2 of 4
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September 2008
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