User Manual

DMP3020LSS
Document number: DS31263 Rev. 11 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP3020LSS
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
25
V
Drain Current (Note 5) Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-12
-6
A
Pulsed Drain Current (Note 6)
I
DM
-40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
2.5 W
Thermal Resistance, Junction to Ambient
R

JA
50 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
 
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
 
-1 μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
 
100
nA
V
GS
= 20V, V
DS
= 0V
 
800
V
GS
= 25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-1

-2 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)


11.6
18.6
14
25
mΩ
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance
g
fs

12

S
V
DS
= -10V, I
D
= -12A
Diode Forward Voltage (Note 7)
V
SD
-0.5

-1.1 V
V
GS
= 0V, I
S
= -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss

1802

pF
V
DS
= -15V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss

415

pF
Reverse Transfer Capacitance
C
rss

295

pF
Gate Resistance
R
G

2.3

Ω
V
GS
= 0V, V
DS
= 0V, f = MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g

15.3
30.7

nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -8A
V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Gate-Source Charge
Q
g
s

3.5
 V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Gate-Drain Charge
Q
g
d

7.9
 V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Turn-On Delay Time
t
d
(
on
)

5.1

ns
V
GS
= -10V, V
DS
= -15V,
R
D
= 15Ω, R
G
= 6Ω
Rise Time
t
r

8

Turn-Off Delay Time
t
d
(
off
)

46

Fall Time
t
f

30

Notes: 5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R
JA
= 50°C/W.
6. Pulse width 10μs, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.