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DMP2240UDM

Document number: DS31197 Rev. 5 - 2

1 of 5

www.diodes.com

April 2010

DMP2240UDM

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• 150 mΩ @ V

= -4.5V

• 200 mΩ @ V

= -2.5V

• 240 mΩ @ V

= -1.8V

• Very Low Gate Threshold Voltage V

GS(th)

≤ 1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±12 V

Drain Current (Note 1)

= 25°C

= 70°C

-2.0

-1.5

Pulsed Drain Current

-7 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)

600 mW

Thermal Resistance, Junction to Ambient

208 °C/W

Operating and Storage Temperature Range

STG

-65 to +150 °C

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-26

TOP VIEW

Internal Schematic

Summary of content (5 pages)

PAGE 1
DMP2240UDM DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.
PAGE 2
DMP2240UDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS -20 ⎯ V VGS = 0V, ID = -250μA IDSS ⎯ ⎯ ⎯ -1.0 -5.0 μA VDS = -20V, VGS = 0V TJ = 25°C TJ = 125°C Test Condition Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V VGS(th) -0.45 ⎯ -1.
PAGE 3
DMP2240UDM TA = 25°C ID = 1.0A VGS = -1.8V VGS = -2.5V VGS = -4.5V VGS = -1.8V VGS = -2.5V VGS = -4.5V VGS = -10V 0.30 600 VGS = -4.5V f = 1MHz 500 0.20 400 Ciss 300 TA = 150°C TA = 125°C 200 0.10 TA = 25°C Coss TA = -55°C 100 Crss 0.00 0 1 2 3 4 0 5 0.3 0 2 4 6 8 10 12 14 16 18 20 16 18 10,000 VGS = 0V 0.27 0.24 Tj = 150°C VGS = -1.8V ID = -200mA 0.21 0.18 VGS = -2.5V ID = -670mA 0.15 1,000 Tj = 125°C VGS = -4.5V ID = -950mA 0.12 0.09 0.06 0.
PAGE 4
DMP2240UDM 1 VGS = 0V Tj = 25°C 0.8 0.6 0.4 0.2 0 0 0.2 0.4 Ordering Information 0.6 0.8 1 (Note 5) Case SOT-26 Part Number DMP2240UDM-7 Notes: Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
PAGE 5
DMP2240UDM Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).