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DMP21D0UFD

Datasheet Number: DS35364

Rev. 4 - 2

1 of 8

www.diodes.com

March 2012

Product Line o

Diodes Incorporated

DMP21D0UFD

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

Max

max

= 25°C

(Notes 4)

-20V

495mΩ @ V

= -4.5V

-1.14A

730mΩ @ V

= -2.5V

-0.94A

960mΩ @ V

= -1.8V

-0.85A

1300mΩ @ V

= -1.5V

-0.75A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Portable electronics

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 3KV

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.005 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP21D0UFD-7 K21 7 8 3000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Equivalent Circuit

Top View Bottom View

Pin-out Top view

X1-DFN1212-3

Gate

Drain

Source

Gate

Protection

Diode

ESD PROTECTED TO 3kV

K21

K21 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) Max -20V 495mΩ @ VGS = -4.5V 730mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V 1300mΩ @ VGS = -1.5V • • • • • • ID max TA = 25°C (Notes 4) -1.14A -0.94A -0.85A -0.75A Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate 3KV Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free.
PAGE 2
A Product Line of Diodes Incorporated DMP21D0UFD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Pulsed Drain Current (Note 6) Thermal Characteristics IDM Unit V V Value 930 490 135 256 -55 to +150 Unit mW mW °C/W °C/W °C A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Juncti
PAGE 3
A Product Line of Diodes Incorporated DMP21D0UFD Thermal Characteristics 10 Single Pulse RθJA = 136°C/W RθJA (t) = RθJA*r(t) T J - T A = P*R θJA 9 8 -ID(A) @PW =1ms ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 10 7 6 5 4 3 -I D (A )@ P W= 1 @ (A) -I D DC @ (A) -I D =1 PW @ (A) -I D 0.1 10 0 µs 0s =1 PW @ (A) -I D s =1 PW 00 ms )@ (A -I D 0.01 2 RDS(ON) Limited =1 PW 0m s TJ(MAX) = 150° C TA = 25°C Single Pulse 1 0.001 0.1 0 0.0001 0.
PAGE 4
A Product Line of Diodes Incorporated DMP21D0UFD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.45 -0.
PAGE 5
A Product Line of Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 VGS = -1.5V 0.8 VGS = -1.8V 0.6 VGS = -2.5V 0.4 VGS = -4.5V 0.2 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 1.2 TA = 150°C VGS = -1.8V 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UFD TA = 125°C 0.8 TA = 85°C 0.6 TA = 25°C 0.4 TA = -55°C 0.
PAGE 6
A Product Line of Diodes Incorporated DMP21D0UFD 2.0 1.8 1.2 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 ID = -1mA 0.8 0.6 ID = -250µA 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.4 10,000 IGSS, LEAKAGE CURRENT (nA) 1,000 T A = 150°C TA = 125°C 100 TA = 85°C 10 1 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 13 Diode Forward Voltage vs. Current 100,000 10,000 0 TA = 125°C 100 T A = 25°C TA = -55°C 1 0.1 0 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 7
A Product Line of Diodes Incorporated DMP21D0UFD -VGS, GATE-SOURCE VOLTAGE (V) 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Qg, TOTAL GATE CHARGE (nC) Fig. 18 Gate-Charge Characteristics Package Outline Dimensions A X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.
PAGE 8
A Product Line of Diodes Incorporated DMP21D0UFD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).