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DMP2039UFDE

Document number: DS35420 Rev. 5 - 2

1 of 6

www.diodes.com

July 2012

DMP2039UFDE

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON) max

Package

= +25°C

-25V

27mΩ @ V

= -4.5V

U-DFN2020-6

Type E

-6.7A

40mΩ @ V

= -1.8V

-5.4A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Load Switching

• Battery Management Application

• Power Management Functions

Features

• Low R

DS(ON)

– Ensures on State Losses are Minimized

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm

• ESD Protected Gate

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMP2039UFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D



Green

U-DFN2020-6

Type E

Bottom View

Equivalent Circuit

ESD PROTECTED

Bottom View

Internal Schematic

Pin1

Source

Gate

Protection

Diode

Gate

Drain

P9 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Summary of content (6 pages)

PAGE 1
DMP2039UFDE Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features RDS(ON) max 27mΩ @ VGS = -4.5V -25V 40mΩ @ VGS = -1.8V • • • • • • • ID TA = +25°C Package -6.7A U-DFN2020-6 Type E -5.4A Low RDS(ON) – Ensures on State Losses are Minimized 0.6mm Profile – Ideal for Low Profile Applications 2 PCB Footprint of 4mm ESD Protected Gate Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMP2039UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Continuous Drain Current (Note 5) VGS = -1.8V Steady State t<5s ID Value -25 ±8 -6.7 -5.3 ID -8.3 -6.6 A ID -5.4 -4.3 A A -6.6 -5.2 -60 -2.
PAGE 3
DMP2039UFDE 20 20 VGS = 8.0V VGS = 4.5V VGS = 2.0V 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = 1.5V VGS = 1.8V 8 4 0 10 5 TA = 150°C 0 TA = 125°C 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0.06 0.05 0.04 0.03 0.02 0.01 0 1 2 3 4 5 6 7 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 0 10 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 0.
PAGE 4
DMP2039UFDE 20 18 1.2 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.4 1.0 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs.
PAGE 5
DMP2039UFDE 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 64°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.
PAGE 6
DMP2039UFDE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).