User guide

DMP2035U
Document number: DS31830 Rev. 2 - 2
4 of 6
www.diodes.com
December 2011
© Diodes Incorporated
DMP2035U
NEW PRODUCT
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.2
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
1.0
I = -250µA
D
I = -1mA
D
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
1,000
10,000
02 46 8101214161820
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
iss
C
rss
C
oss
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10
100
1,000
10,000
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.01 0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ