User guide
DMP2035U
Document number: DS31830 Rev. 2 - 2
2 of 6
www.diodes.com
December 2011
© Diodes Incorporated
DMP2035U
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-3.6
-2.9
A
Pulsed Drain Current (Note 5)
I
DM
-24 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
0.81 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R
θJA
153.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 -0.7 -1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS(ON)
-
23
30
41
35
45
62
mΩ
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -2.5V, I
D
= -4.0A
V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
|
- 14 - S
V
DS
= -5V, I
D
= -4A
Diode Forward Voltage
V
SD
- -0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
- 1610 -
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
- 157 -
pF
Reverse Transfer Capacitance
C
rss
- 145 -
pF
Gate Resistance
R
g
- 9.45 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
- 15.4 -
nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -4A
Gate-Source Charge
Q
g
s
- 2.5 -
nC
Gate-Drain Charge
Q
g
d
- 3.3 -
nC
Turn-On Delay Time
t
D
(
on
)
- 16.8 -
ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10Ω, R
G
= 6.0Ω, I
D
= -1A
Turn-On Rise Time
t
r
- 12.4 -
ns
Turn-Off Delay Time
t
D
(
off
)
- 94.1 -
ns
Turn-Off Fall Time
t
f
- 42.4 -
ns
Notes: 4. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t أ10s.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.