User Manual

DMP2018LFK
Document number: DS35357 Rev. 5 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMP2018LFK
ADVANCE INFORMATION
NEW PRODUCT
0 5 10 15 20
100
1,000
10,000
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
C
iss
C
rss
C
oss
04 8121620
1
10
100
1,000
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
100,000
10,000
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
020406080100120
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
-V ,
A
E-S
E V
L
A
E (V)
GS
V = -16V
I = -7.2A
DS
D
0.1 1 10 100
Fig. 12 Safe Operation Area
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.01
0.1
1
10
100
I, D
AIN
EN
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0.001 0.01 0.1 1 10 100 1,000
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 61°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5