User guide

POWERDI is a registered trademark of Diodes Incorporated
DMP2006UFG
Document number: DS36802 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP2006UFG
ADVANCE INFORMATION
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage (Note 5)
V
GSS
±10 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
-17.5
-14.0
-40
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-80 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-2.2 A
Avalanche Current (Note 8) L=0.1mH
I
AS
-23 A
Avalanche Energy (Note 8) L=0.1mH
E
AS
28 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.3
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
54
°C/W
(Note 7) 136
Thermal Resistance, Junction to Case (Note 6)
R
θJC
3.0
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
— — -1
µA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 — -1.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
— 4.2 5.2
mΩ
V
GS
= -4.5V, I
D
= -15A
— 5.4 7.5
V
GS
= -2.5V, I
D
= -10A
— 7 —
V
GS
= -1.8V, I
D
= -1A
Diode Forward Voltage V
SD
— -0.7 -1.2 V
V
GS
= 0V, I
S
= -10A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 5404 —
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
728
—
Reverse Transfer Capacitance
C
rss
—
612
—
Gate Resistance
R
G
—
3.8
— Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
—
64
—
nC
V
DD
= -10V, I
D
= -20A
Total Gate Charge (V
GS
= -10V) Q
g
—
140
—
Gate-Source Charge
Q
g
s
—
8.5
—
Gate-Drain Charge
Q
g
d
—
17
—
Turn-On Delay Time
t
D
(
on
)
—
9.1
—
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 1Ω, R
G
= 1Ω I
D
= -10A
Turn-On Rise Time
t
r
—
19
—
Turn-Off Delay Time
t
D
(
off
)
—
146
—
Turn-Off Fall Time
t
f
—
104
—
Reverse Recovery Time (Note 10)
t
r
r
—
61
— ns
I
F
= -10A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10)
Q
r
r
—
44
— nC
I
F
= -10A, di/dt = 100A/µs
Notes: 5. AEC-Q101 VGS maximum is ±8V
6. R
θJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
θJC
is guaranteed by design
while R
θJA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L =0.1mH, T
J
= +25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.