User Manual
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-12 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.9
-3.1
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-1.7
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
-25 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.36
W
t < 5s 1.89
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
92
°C/W
t < 5s 66
Thermal Resistance, Junction to Case (Note 5)
R
JC
18
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
— —
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— —
-1.0 A
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±10 A
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 — -1 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
37 59
m
V
GS
= -4.5V, I
D
= -3.6A
—
48 81
V
GS
= -2.5V, I
D
= -3.1A
—
69 115
V
GS
= -1.8V, I
D
= -2.6A
—
88 215
V
GS
= -1.5V, I
D
= -0.5A
Diode Forward Voltage
V
SD
—
-0.7 -1.2 V
V
GS
= 0V, I
S
= -3.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 1028 —
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 285 —
pF
Reverse Transfer Capacitance
C
rss
— 254 —
pF
Gate Resistance
R
g
— 19.6 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 13 —
nC
V
DS
= -10V, I
D
= -4.7A
Total Gate Charge (V
GS
= -8V)
— 20.8 —
nC
Gate-Source Charge
Q
g
s
— 1.8 —
nC
Gate-Drain Charge
Q
g
d
— 4.5 —
nC
Turn-On Delay Time
t
D
(
on
)
— 5.6 —
ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6, R
G
= 1
Turn-On Rise Time
t
r
— 12.8 —
ns
Turn-Off Delay Time
t
D
(
off
)
— 30.7 —
ns
Turn-Off Fall Time
t
f
— 25.4 —
ns
Body Diode Reverse Recovery Time trr
—
31.6
—
nS
I
S
= -3.6A, dI/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr
—
7.8
—
nC
I
S
= -3.6A, dI/dt = 100A/s
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.