User guide

DMN6070SSD
Document number: DS36342 Rev. 2 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN6070SSD
NEW PRODUCT
ADVANCE INFORMATION
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)

V = 4.5V
I= 5A
GS
D
V=V
I = 10A
GS
D
10
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150
T, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
5
10
15
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = -55°C
A
T= 25°C
A
T= 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
10
100
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = -8V
Single Pulse
GS
DUT on 1 * MRP Board
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 108°C/W
Duty Cycle, D = t1/ t2


JA JA
JA