Manual

DMN6066SSD
Document Number DS32109 Rev 3 - 2
4 of 9
www.diodes.com
December 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN6066SSD
ADVANCE INFORMATION
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
⎯ ⎯
V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
0.5
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
1.0
⎯
3.0 V
I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS (ON)
⎯
0.048 0.066

V
GS
= 10V, I
D
= 4.5A
0.068 0.097
V
GS
= 4.5V, I
D
= 3.5A
Forward Transconductance (Notes 10 & 11)
g
fs
⎯
19.2
⎯
S
V
DS
= 15V, I
D
= 6A
Diode Forward Voltage (Note 10)
V
SD
⎯
0.89 1.15 V
I
S
= 4.5A, V
GS
= 0V
Reverse recovery time (Note 11)
t
r
r
22.2
⎯
ns
I
S
= 1.9A, di/dt= 100A/μs
Reverse recovery charge (Note 11)
Q
r
r
⎯
16.9
⎯
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯
502
⎯
pF
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
45.7
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
27.1
⎯
pF
Total Gate Charge (Note 12)
Q
g
⎯
5.4
⎯
nC
V
GS
= 4.5V
V
DS
= 30V
I
D
= 4.5A
Total Gate Charge (Note 12)
Q
g
⎯
10.3
⎯
nC
V
GS
= 10V
Gate-Source Charge (Note 12)
Q
g
s
⎯
1.7
⎯
nC
Gate-Drain Charge (Note 12)
Q
g
d
⎯
3.2
⎯
nC
Turn-On Delay Time (Note 12)
t
D
(
on
)
⎯
2.7
⎯
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 12)
t
r
⎯
2.4
⎯
ns
Turn-Off Delay Time (Note 12)
t
D
(
off
)
⎯
14.7
⎯
ns
Turn-Off Fall Time (Note 12)
t
f
⎯
5.4
⎯
ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.