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DMN6066SSD

Document Number DS32109 Rev 3 - 2

1 of 9

www.diodes.com

December 2011

Product Line o

Diodes Incorporated

DMN6066SSD

ADVANCE INFORMATION

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

60V

66mΩ @ V

= 10V

4.4A

97mΩ @ V

= 4.5V

3.6A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

Features and Benefits

• Low on-resistance

• Fast switching speed

• 100% Unclamped Inductive Switch (UIS) test in production

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN6066SSD-13 N6066SD 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

Top View

Equivalent Circuit

= Manufacturer’s Marking

N6066SD = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01 - 53)

N6066SD

Top View

SO-8

Summary of content (9 pages)

PAGE 1
A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C • Low on-resistance • Fast switching speed • 100% Unclamped Inductive Switch (UIS) test in production 66mΩ @ VGS = 10V 4.4A • “Green” component and RoHS compliant (Note 1) 97mΩ @ VGS = 4.5V 3.
PAGE 2
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 9) (Note 9) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS EAS IAS ID IDM I
PAGE 3
A Product Line of Diodes Incorporated Thermal Characteristics RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 10 1 100m DC 1s 100ms 10m 1m 100m 10ms Single Pulse T amb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 Single Pulse D=0.05 D=0.
PAGE 4
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 60V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) 1.
PAGE 5
A Product Line of Diodes Incorporated Typical Characteristics 10V T = 150°C 4.5V 10 ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 0.1 3V VGS 0.01 3.5V 1 3V 2.5V 0.1 VGS 2V 1 10 0.1 T = 150°C T = 25°C 0.01 1E-3 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1 1 10 Output Characteristics VDS = 10V 0.1 1 VDS Drain-Source Voltage (V) Output Characteristics 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.
PAGE 6
A Product Line of Diodes Incorporated DMN6066SSD VGS = 0V 600 400 f = 1MHz CISS COSS CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - continued 8 6 4 0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage DMN6066SSD Document Number DS32109 Rev 3 - 2 VDS = 30V 2 ID = 4.5A 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge 6 of 9 www.diodes.
PAGE 7
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN6066SSD Document Number DS32109 Rev 3 - 2 Switching time test circuit 7 of 9 www.diodes.
PAGE 8
A Product Line of Diodes Incorporated DMN6066SSD h x 45° ADVANCE INFORMATION Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max.
PAGE 9
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6066SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).