User Manual

DMN601DMK
Document number: DS30657 Rev. 5 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
510
400
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
580
470
mA
Continuous Drain Current (Note 5) V
GS
= 4V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
390
300
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
440
340
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
850 mA
Maximum Body Diode Continuous Current
I
S
1.2 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
P
D
0.7 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R
θ
JA
157
°C/W
t<10s 121
Total Power Dissipation (Note 5)
P
D
0.98 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
113
°C/W
t<10s 88
Thermal Resistance, Junction to Case (Note 5)
R
θ
JC
26
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯ ⎯
V
V
GS
= 0V, I
D
= 10μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±10 μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.0 1.6 2.5 V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
2.4
4.0
Ω
V
GS
= 10V, I
D
= 200mA
V
GS
= 4V, I
D
= 200mA
Forward Transfer Admittance
|Y
fs
|
100
⎯ ⎯
ms
V
DS
=10V, I
D
= 200mA
Diode Forward Voltage
V
SD
0.5
⎯
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
30 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
5 25 pF
Reverse Transfer Capacitance
C
rss
⎯
3 5.0 pF
Gate Resistance
R
g
⎯
133
⎯

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
⎯
304
⎯
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
g
s
⎯
84
⎯
Gate-Drain Charge
Q
g
d
⎯
203
⎯
Turn-On Delay Time
t
D
(
on
)
⎯
3.9
⎯
ns
V
DS
= 30V, I
D
= 0.2A,
V
GS
= 10V, R
G
= 25, R
L
= 150
Turn-On Rise Time
t
r
⎯
3.4
⎯
Turn-Off Delay Time
t
D
(
off
)
⎯
15.7
⎯
Turn-Off Fall Time
t
f
⎯
9.9
⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing