User Manual

DMN4031SSD
Document number: DS35410 Rev. 4 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.42 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
88 °C/W
Total Power Dissipation (Note 6)
P
D
2.6 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
48 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40
—
— V
V
GS
= 0V, I
D
= 10mA
Zero Gate Voltage Drain Current
I
DSS
— —
1 μA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
1.6 2.4 3.0 V
V
DS
= V
GS
, I
D
= 250μA
On-state drain current
I
D
(
ON
)
20
— —
A
V
GS
= 10V, V
DS
= 5A
Static Drain-Source On-Resistance
R
DS (ON)
—
19 31
mΩ
V
GS
= 10V, I
D
= 6A
—
44 50
V
GS
= 4.5V, I
D
= 5A
Forward Transfer Admittance
|Y
fs
|
—
11 — S
V
DS
= 5V, I
D
= 6A
Diode Forward Voltage
V
SD
—
0.74 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
945
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
69
—
pF
Reverse Transfer Capacitance
C
rss
—
58
—
pF
Gate resistance
R
g
—
1.45
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
8.4
—
nC
V
GS
= 10V, V
DS
= 20V,
I
D
= 12A
Total Gate Charge (V
GS
= 10V) Q
g
—
18.6
—
nC
Gate-Source Charge
Q
g
s
—
3.3
—
nC
Gate-Drain Charge
Q
g
d
—
2.2
—
nC
Turn-On Delay Time
T
D
(
on
)
—
6.4
—
ns
V
GS
= 10V, V
DS
= 20V,
R
L
= 1.6Ω, R
G
= 3Ω
Turn-On Rise Time
T
r
—
9.7
—
ns
Turn-Off Delay Time
T
D
(
off
)
—
19.8
—
ns
Turn-Off Fall Time
T
f
—
3.1
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.2
4.1
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.4
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.0
5.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.7
A
Pulsed Drain Current (Note 7)
I
DM
20 A