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DMN4031SSD

Document number: DS35410 Rev. 4 - 2

1 of 6

www.diodes.com

February 2014

DMN4031SSD

ADVANCE INFORMATION

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= +25°C (Note 5)

40V

31mΩ @ V

= 10V

7.0A

50mΩ @ V

= 4.5V

5.6A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Motor control

• Backlighting

• Power Management Functions

• DC-DC Converters

Features and Benefits

• Low On-Resistance

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

SO-8

Ordering Information (Note 4)

Part Number Case Packaging

DMN4031SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Internal Schematic

N-channel MOSFET

Y W

= Manufacturer’s Marking

N4031SD = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Shanghai A/T Site

Chengdu A/T Site

Summary of content (6 pages)

PAGE 1
DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS(ON) max ID max TA = +25°C (Note 5) • • Low Input/Output Leakage 31mΩ @ VGS = 10V 7.0A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 50mΩ @ VGS = 4.5V 5.6A • Halogen and Antimony Free.
PAGE 2
DMN4031SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 4.
PAGE 3
0 25 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 VGS = 10V 20 15 VGS = 4.5V 10 5 20 15 10 TA = 150°C TA = 125°C 0 0.5 1.0 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics TA = -55°C 0 2.0 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
DMN4031SSD 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 20 2.5 2.0 1.5 1.0 0.5 0 -50 12 8 4 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMN4031SSD Package Outline Dimensions 0.254 ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.
PAGE 6
DMN4031SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).