User guide

DMN4020LFDE
D
atasheet number: DS35819 Rev. 3 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN4020LFDE
ADVANCE INFORMATION
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)

V=4.5V
I= 5A
GS
D
V=V
I= 8A
GS
D
10
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = -55°C
A
T= 25°C
A
T= 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t),
T
R
A
N
SIE
N
T
T
H
E
R
M
AL
R
ESIS
T
A
N
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 177°C/W
Duty Cycle, D = t1/ t2


JA JA
JA