Instruction Manual

DMN313DLT
Document number: DS35078 Rev. 2 - 2
3 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN313DLT
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
0.2
0.4
0.6
0.8
1.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = 10V
GS
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 5.0V
GS
V = 4.0V
GS
0 0.5 1.0 1.5 2.0 2.5 3.0
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0.001
0.01
0.1
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
DS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0
0.5
1
1.5
2
2.5
3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V = 10V
GS
V = 2.5V
GS
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0 0.2 0.4 0.6 0.8 1
0.1
1
10
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5.0V
GS
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E,
O
N
-
R
ESIS
T
A
N
C
E ( )
DSON
Ω
0
0.5
1
1.5
2
2.5
3
V = 10V
I = 300mA
GS
D
V = 10V
I = 150mA
GS
D
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1
1.2
1.4
1.6
I = 1mA
D