Instruction Manual

DMN313DLT
Document number: DS35078 Rev. 2 - 2
2 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN313DLT
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 4) V
GS
= 4.0V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
0.27
0.21
A
Continuous Drain Current (Note 5) V
GS
= 4.0V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
0.31
0.25
A
Continuous Drain Current (Note 5) V
GS
= 4.0V
t ≤ 10s
T
A
= 25°C
T
A
= 70°C
I
D
0.38
0.3
A
Continuous Drain Current (Note 4) V
GS
= 2.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
0.21
0.15
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
t ≤ 10s
T
A
= 25°C
T
A
= 70°C
I
D
0.29
0.22
A
Pulsed Drain Current (Note 6)
I
DM
1.2 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 4)
P
D
0.28 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R
JA
474 °C/W
Power Dissipation (Note 5)
P
D
0.36 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) R
JA
361 °C/W
Power Dissipation (Note 5) t ≤ 10s
P
D
0.52 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) t ≤ 10s R
JA
252 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
- - 0.1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±1.0
μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.5 - 1.5 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
- 1.3 2
Ω
V
GS
= 4V, I
D
= 10mA
- 1.6 3.2
V
GS
= 2.5V, I
D
= 1mA
Forward Transfer Admittance
|Y
fs
|
- 93 - mS
V
DS
= 3V, I
D
= 10mA
Diode Forward Voltage
V
SD
- 0.7 1.3 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 36.3 -
pF
V
DS
= 5V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 7.6 -
Reverse Transfer Capacitance
C
rss
- 4.7 -
Gate Resistance
R
g
- 128 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
- 0.5 -
nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 10mA
Gate-Source Charge
Q
g
s
- 0.1 -
Gate-Drain Charge
Q
g
d
- 0.1 -
Turn-On Delay Time
t
D
(
on
)
- 4.5 - ns
V
GS
= 4.5V, V
DS
= 15V,
R
G
= 2,
I
D
= 180mA
Turn-On Rise Time
t
r
- 2.24 - ns
Turn-Off Delay Time
t
D
(
off
)
- 19.2 - ns
Turn-Off Fall Time
t
f
- 28.2 - ns
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.