User guide

DMN3018SSD
Document number: DS35583 Rev. 3 - 2
4 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMN3018SSD
NEW PRODUCT
ADVANCE INFORMATION
0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
S
T= 25°C
A
02 4 6 810121416
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 9 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V = 15V, I = A
DS D
9
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (p
F
)
T
C
iss
f = 1MHz
C
oss
C
rss
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
100
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
10
1
0.1
0.01
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ