User Manual
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
510
410
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
610
490
mA
Continuous Drain Current (Note 5) V
GS
= 1.8V
Steady
State
T
A
= +25°C
T
A
= 70°C
I
D
380
300
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
450
360
mA
Pulsed Drain Current (Note 6)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5) Steady state
P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
310 °C/W
t<10s 220 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— —
100
nA
V
DS
= 16V, V
GS
= 0V
— —
50
V
DS
= 5V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
—
0.60 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
—
0.75 1.2
V
GS
= 2.5V, I
D
= 50mA
—
0.90 1.8
V
GS
= 1.8V, I
D
= 20mA
—
1.2 2.4
V
GS
= 1.5V, I
D
= 10mA
—
2.0 —
V
GS
= 1.2V, I
D
= 1mA
Forward Transfer Admittance
|Y
fs
|
180
— —
mS
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage
V
SD
- 0.6 1.0 V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 27.6 55.2 pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
4.0 8.0 pF
Reverse Transfer Capacitance
C
rss
—
2.8 5.6 pF
Total Gate Charge
Q
g
—
0.5
—
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
—
0.07
—
nC
Gate-Drain Charge
Q
gd
—
0.07
—
nC
Turn-On Delay Time
t
D(on)
—
4.0
—
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47, R
G
= 10,
I
D
= 200mA
Turn-On Rise Time
t
r
—
3.3
—
ns
Turn-Off Delay Time
t
D(off)
—
19.0
—
ns
Turn-Off Fall Time
t
f
—
6.4
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.