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DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

1 of 6

www.diodes.com

February 2014

DMN25D0UFA

25V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= +25°C

25V

4 @ V

= 4.5V

0.32A

5 @ V

= 2.7V

0.28A

Description

This MOSFET has been designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

• Load switch

• Portable applications

• Power Management Functions

Features

• 0.4mm ultra low profile package for thin application

• 0.48mm

package footprint, 16 times smaller than SOT23

• Low V

GS(th),

can be driven directly from a battery

• Low R

DS(on)

• ESD Protected Gate (>6kV Human Body Mode)

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN0806-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.00043 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMN25D0UFA-7B Standard X2-DFN0806-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Equivalent Circuit

Bottom View

Top View

Package Pin Configuration

56 = Product Type Marking Code

DMN25D0UFA-7B

Top View

Bar Denotes Gate

and Source Side

X2-DFN0806-3

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD HBM >6kV

Summary of content (6 pages)

PAGE 1
DMN25D0UFA 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • 0.4mm ultra low profile package for thin application 0.32A • • 0.48mm package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 0.28A • Low RDS(on) RDS(on) ID TA = +25°C 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.
PAGE 2
DMN25D0UFA Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS 25 Gate-Source Voltage VGSS 8 (Note 6) 0.32 ID 0.25 Unit V A Continuous Drain Current, VGS = 4.5V TA = +70°C (Note 6) (Note 5) ID 0.24 A Pulsed Drain Current (Note 7) IDM 1.2 A Symbol Value 0.63 0.28 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
DMN25D0UFA 0.5 0.5 VGS = 8.0V VDS = 5.0V VGS = 4.5V VGS = 4.0V 0.4 VGS = 3.5V VGS = 3.0V VGS = 1.5V VGS = 2.5V 0.3 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 VGS = 2.0V 0.2 0.1 TA = 150°C TA = 125°C TA = 85°C TA = 25°C T A = -55°C 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 VGS = 2.7V 0.9 0.8 VGS = 4.5V 0.7 0.6 0.5 0 0 0.1 0.2 0.3 0.
PAGE 4
2 1.2 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN25D0UFA 1.8 1.6 1.4 VGS = 2.7 V ID = 100mA 1.2 1 0.8 VGS = 4.5V ID = 500mA 0.6 0.4 0.2 1 ID = 1mA ID = 250µA 0.8 0.6 0.4 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100 0.
PAGE 5
DMN25D0UFA 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 334°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PAGE 6
DMN25D0UFA Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions Y1 C X X1 X2 Y Y1 Y2 Y2 X (2x) Y (2x) Value (in mm) 0.350 0.200 0.450 0.550 0.375 0.475 1.