Instruction Manual

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DMN2501UFB4

Document number: DS35824 Rev. 3 - 2

1 of 6

www.diodes.com

August 2012

DMN2501UFB4

ADVANCE INFORMATION

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

20V

0.4Ω @ V

= 4.5V

1.5A

0.5Ω @ V

= 2.5V

1.3A

0.7Ω @ V

= 1.8V

1.1A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

Features and Benefits

• Low On-Resistance

• Very Low Gate Threshold Voltage V

GS(TH)

, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surfaced Mount Package

• Ultra-low package profile, 0.4mm maximum package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN2501UFB4-7 X2-DFN1006-3 3,000/Tape & Reel

DMN2501UFB4-7B X2-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"

and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Top View

Internal Schematic

Bottom View

TN = Product Type Marking Code

Top View

Bar Denotes Gate

and Source Side

ESD PROTECTED

DMN2501UFB4-7 DMN2501UFB4-7B

Top View

Dot Denotes

Drain Side

TNTN

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

Summary of content (6 pages)

PAGE 1
DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.
PAGE 2
DMN2501UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s ID Value 20 ±8 1.0 0.8 ID 1.2 0.9 A ID 1.5 1.2 A A 1.8 1.
PAGE 3
DMN2501UFB4 20 2.0 1.8 VGS = 8.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 VGS = 2.5V 1.4 VGS = 2.0V 1.2 VGS = 1.5V 1.0 0.8 0.6 0.4 TA = 150°C 8 T A = 125°C TA = 85°C T A = 25°C VGS = 1.2V 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic TA = -55°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.50 0.45 0.40 0.35 0.30 0.25 VGS = 1.8V 0.20 VGS = 2.5V 0.15 0.10 VGS = 8.0V VGS = 4.5V 0.05 0 0 0.4 0.8 1.2 1.
PAGE 4
VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 0.25 VGS = 4.5V ID = 1.0A 0.20 0.15 VGS = 8.0V ID = 1A 0.10 0.05 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 1,000 2.0 CT, JUNCTION CAPACITANCE (pF) 1.8 IS, SOURCE CURRENT (A) 1.6 1.
PAGE 5
DMN2501UFB4 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 251°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PAGE 6
DMN2501UFB4 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).