User guide

DMN2400UFB
Document number: DS31963 Rev. 3 - 2
4 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMN2400UFB
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 10 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 10V
I = 250mA
DS
D
0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ JA
R
R = 253°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5