User guide
DMN2400UFB
Document number: DS31963 Rev. 3 - 2
2 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMN2400UFB
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 4) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
0.75
0.55
A
Continuous Drain Current (Note 4) V
GS
= 2.5V
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
0.63
0.45
A
Pulsed Drain Current (Note 5)
I
DM
3 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
P
D
0.47 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
258 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 100 nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±1.0
μA
V
GS
= ±4.5V, V
DS
= 0V
Gate-Source Leakage
I
GSS
- - ±50
μA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.5 - 0.9 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
- - 0.55
Ω
V
GS
= 4.5V, I
D
= 600mA
- - 0.75
V
GS
= 2.5V, I
D
= 500mA
- - 0.9
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
- 1.0 - S
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage (Note 6)
V
SD
0.7 1.2 V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 36.0 - pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 5.7 - pF
Reverse Transfer Capacitance
C
rss
- 4.2 - pF
Total Gate Charge
Q
g
- 0.5 - nC
V
GS
=4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
g
s
- 0.07 - nC
Gate-Drain Charge
Q
g
d
- 0.1 - nC
Turn-On Delay Time
t
D
(
on
)
- 4.11 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47, R
G
= 10,
I
D
= 200mA
Turn-On Rise Time
t
r
- 3.82 - ns
Turn-Off Delay Time
t
D
(
off
)
- 14.8 - ns
Turn-Off Fall Time
t
f
- 9.6 - ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.