Manual

DMN2112SN
Document number: DS30830 Rev. 5 - 2
1 of 4
www.diodes.com
August 2011
© Diodes Incorporated
DMN2112SN
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.014 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage Continuous
V
GSS
± 8 V
Drain Current Continuous
Pulsed
I
D
1.2
4.0
A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation
P
d
500 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
250
°C /W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯ ⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current @ T
j
= 25°C I
DSS
⎯ ⎯
10 µA
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
± 10
µA
V
GS
= ± 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
V
GS
(
th
)
0.5
⎯
1.2 V
V
DS
= 10V, I
D
= 1.0mA
Static Drain-Source On-Resistance
R
DS (ON)
⎯ ⎯
0.10
0.14
0.25
Ω
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
V
GS
= 1.5V, I
D
= 0.1A
Forward Transfer Admittance
IY
fs
I ⎯
4.2
⎯
S
V
DS
= 10V, I
D
=0.5A
Diode Forward Voltage
V
SD
⎯
0.8 1.1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
220
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
120
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
45
⎯
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D
(
ON
)
⎯
10
⎯
ns
V
DD
= 5V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50Ω
Turn-Off Delay Time
t
D
(
OFF
)
⎯
75
⎯
ns
Turn-On Rise Time
t
r
⎯
15
⎯
ns
Turn-Off Fall Time
t
f
⎯
65
⎯
ns
Notes: 1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SC59
TOP VIEW
Pin Out Confi
g
uration
TOP VIEW
ESD Protected
Source
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
D
G
S