User Manual

DMN2100UDM
Document number: DS31186 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN2100UDM
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
4.0
3.1
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
4.5
3.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
13 A
Maximum Body Diode Continuous Current
I
S
1.5 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1
W
T
A
= 70°C
0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
127
°C/W
t<10s 91
Total Power Dissipation (Note 6)
T
A
= 25°C
P
D
1.5
W
T
A
= 70°C
0.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
85
°C/W
t<10s 63
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
3.1
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯ ⎯
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±1 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.6
⎯
1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
32 55
mΩ
V
GS
= 4.5V, I
D
= 6A
⎯
43 70
V
GS
= 2.5V, I
D
= 4.0A
⎯
56 90
V
GS
= 1.8V, I
D
= 1.5A
⎯
80 130
V
GS
= 1.5V, I
D
= 1.0A
Forward Transfer Admittance
|Y
fs
| ⎯
8
⎯
S
V
DS
=10V, I
D
= 6A
Diode Forward Voltage
V
SD
⎯
0.7 1.1 V
V
GS
= 0V, I
S
= 2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
555
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
112
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
84
⎯
pF
Total Gate Charge
Q
g
⎯
8.8
⎯
nC
V
DS
= 10V, V
GS
= 4.5V,
I
D
= 6.5A
Gate-Source Charge
Q
g
s
⎯
1.4
⎯
nC
Gate-Drain Charge
Q
g
d
⎯
3
⎯
nC
Turn-On Delay Time
t
D
(
on
)
⎯
53
⎯
ns
V
DS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, R
G
= 6
Turn-On Rise Time
t
r
⎯
78
⎯
ns
Turn-Off Delay Time
t
D
(
off
)
⎯
561
⎯
ns
Turn-Off Fall Time
t
f
⎯
234
⎯
ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing