User guide

DMN2075U
Document number: DS31837 Rev. 4 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN2075U
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.4
V,
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
L
T
A
G
E (V)
GS(TH)
1.2
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
10
100
1,000
048121620
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
f = 1MHz
C
iss
C
oss
C
rss
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
0 2 4 6 8 101214161820
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.1
1
10
100
1,000
10,000
I, D
R
AIN-S
O
U
R
C
E LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12

R (t) = r(t) *
 JA
R
R = 157°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1