User guide

DMN2028USS
Document number: DS32075 Rev. 3 - 2
6 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
10
100
1,000
10,000
f = 1MHz
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
iss
C
rss
C
oss
0 5 10 15 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
0 5 10 15 20 25 30
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 9.4A
DS
D