User guide

DMN2028USS
Document number: DS32075 Rev. 3 - 2
2 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2028USS
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage
V
DSS
20
V
Gate-Source voltage
V
GS
±12
Continuous Drain current
V
GS
= 4.5V
(Note 3)
I
D
9.8
A
T
A
= 70°C (Note 3)
7.9
(Note 2) 7.3
Pulsed Drain current
V
GS
= 4.5V
(Note 4)
I
DM
45.0
Continuous Source current (Body diode) (Note 3)
I
S
6.0
Pulsed Source current (Body diode) (Note 4)
I
SM
45.0
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
1.56
12.5
W
mW/°C
(Note 3)
2.81
22.5
Thermal Resistance, Junction to Ambient
(Note 2)
R
θ
JA
80.0
°C/W
(Note 3) 44.5
Thermal Resistance, Junction to Lead (Note 5)
R
θ
JL
37.0
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).