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DMN2028USS

Document number: DS32075 Rev. 3 - 2

1 of 8

www.diodes.com

October 2010

DMN2028USS

ADVANCE INFORMATION

Product Line o

Diodes Incorporated

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

max

= 25°C

(Note 3)

20V

20mΩ @ V

= 4.5V

9.8A

28mΩ @ V

= 2.5V

8.3A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Battery charging

• Power management functions

• DC-DC converters

• Portable power adaptors

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Output Leakage

• ESD Protected Up to 2kV

• Lead Free/RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2028USS-13 N2028US 13 12 2,500

Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com

Marking Information

Top View Top View

SO-8

Equivalent Circuit

ESD PROTECTED TO 2kV

= Manufacturer’s Marking

N2028US = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 10 = 2010)

WW = Week (01-53)

N2028US

YY WW

Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated DMN2028USS ADVANCE INFORMATION 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max V(BR)DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V 8.3A 20V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Output Leakage ESD Protected Up to 2kV Lead Free/RoHS Compliant (Note 1) Halogen and Antimony Free.
PAGE 2
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN2028USS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V Pulsed Drain current VGS = 4.5V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 20 ±12 9.8 7.9 7.3 45.0 6.0 45.0 Unit Value 1.56 12.5 2.81 22.5 80.0 44.5 37.
PAGE 3
A Product Line of Diodes Incorporated Thermal Characteristics 1.6 Max Power Dissipation (W) ID Drain Current (A) RDS(on) Limited 10 1 DC 1s 100m 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 70 25mm x 25mm 1oz FR4 60 T amb=25°C 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.
PAGE 4
A Product Line of Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.6 RDS (ON) - |Yfs| VSD - 1.3 20 28 1.3 V Static Drain-Source On-Resistance (Note 6) 1.
PAGE 5
A Product Line of Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.030 0.025 0.020 0.015 VGS = 2.5V 0.010 VGS = 4.5V 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.030 0.025 T A = 150°C 0.015 TA = 125°C T A = 85°C 0.010 T A = 25°C T A = -55°C 0.005 0 20 0 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.
PAGE 6
A Product Line of Diodes Incorporated DMN2028USS 10,000 1,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) f = 1MHz Ciss Coss Crss 100 TA = 150°C 1,000 TA = 125°C 100 T A = 85°C 10 TA = 25°C 1 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 10,000 VDS = 15V ID = 9.
PAGE 7
A Product Line of Diodes Incorporated DMN2028USS h x 45° ADVANCE INFORMATION Package Outline Dimensions DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max.
PAGE 8
A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN2028USS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).