User Manual

DMN2022UFDF
D
atasheet number: DS36744 Rev. 1 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN2022UFDF
0.2
0.4
0.6
0.8
1.2
1.4
1.0
0
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

I= 1mA
D
I = 250µA
D
12
16
20
0
4
8
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T= 25°C
A
1
10
100
1000
10000
02468101214161820
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (pF)
T
C
iss
C
oss
C
rss
f = 1MHz
0
1
2
3
4
5
6
7
8
02468101214161820
Q(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS
V = 10V
I= A
DS
D
6.5
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 72°C/W
Duty Cycle, D = t1/ t2


JA JA
JA