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DMN2016LFG

Document number: DS32053 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

DMN2016LFG

ADVANCE INFORMATION

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

20V

18mΩ @ V

= 4.5V

5.2A

30mΩ @ V

= 1.8V

4.0A

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Power management functions

• Battery Pack

• Load Switch

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.0172 grams (approximate)

Ordering Information (Note 6)

Part Number Case Packaging

DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Bottom View Bottom View

Pin Configuration

ESD PROTECTED TO 2kV

Top View

Equivalent Circuit

View

S1G1S2G2

D1/D2

5678

4321

5678

4321

N20 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 09 for 2009)

WW = Week code (01 to 53)

YYWW

N20

U-DFN3030-8

Summary of content (6 pages)

PAGE 1
DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 18mΩ @ VGS = 4.5V 5.2A 30mΩ @ VGS = 1.8V 4.
PAGE 2
DMN2016LFG ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Unit V V IDM Value 20 ±8 5.2 4.1 30 Symbol PD RθJA RθJC TJ, TSTG Value 0.77 169 15.
PAGE 3
DMN2016LFG 50 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 35 30 25 20 15 TA = 150°C TA = 125°C T A = 85°C 10 TA = 25°C 5 TA = -55°C 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 2.0 VGS = 1.8V VGS = 2.5V VGS = 4.5V 0 10 20 30 40 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 VGS = 4.5 V ID = 5A 1.2 VGS = 8V ID = 10A 1.0 0.8 0.
PAGE 4
DMN2016LFG 1.2 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 0.9 ID = 1mA 0.6 ID = 250µA 15 TA = 25°C 10 5 0.3 0 -50 0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMN2016LFG ADVANCE INFORMATION Package Outline Dimensions A U-DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 D Suggested Pad Layout Z X1 X2 G Y DMN2016LFG Document number: DS32053 Rev. 3 - 2 Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 C 5 of 6 www.diodes.
PAGE 6
DMN2016LFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).