User guide
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
2 of 6
www.diodes.com
April 2013
© Diodes Incorporated
DMN2013UFDE
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.5
8.5
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
12.5
10.0
A
Continuous Drain Current (Note 7) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.4
7.5
A
t <1 0s
T
A
= +25°C
T
A
= +70°C
I
D
11.2
8.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
80 A
Maximum Body Diode Continuous Current
I
S
2.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
189
°C/W
t<10s 132
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.31
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
JA
61
°C/W
t<10s 43
Thermal Resistance, Junction to Case (Note 7)
R
JC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±2 µA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.5 — 1.1 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
8.4 11
m
V
GS
= 4.5V, I
D
= 8.5A
9.8 13
V
GS
= 2.5V, I
D
= 8.5A
12 30
V
GS
= 1.8V, I
D
= 1A
15 50
V
GS
= 1.5V, I
D
= 0.5A
Forward Transfer Admittance
|Y
fs
|
— 10 — S
V
DS
= 5V, I
D
= 4A
Diode Forward Voltage
V
SD
— — 1.2 V
V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2453 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 275 —
pF
Reverse Transfer Capacitance
C
rss
— 257 —
pF
Gate Resistance
R
g
— 1.2 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 14.3 —
nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 25.8 —
nC
Gate-Source Charge
Q
g
s
— 1.8 —
nC
Gate-Drain Charge
Q
g
d
— 2.1 —
nC
Turn-On Delay Time
t
D
(
on
)
— 9.9 —
ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8
Turn-On Rise Time
t
r
— 24.5 —
ns
Turn-Off Delay Time
t
D
(
off
)
— 66.4 —
ns
Turn-Off Fall Time
t
f
— 20.8 —
ns
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing