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DMN2005LP4K

Document number: DS30799 Rev. 6 - 2

1 of 6

www.diodes.com

June 2012

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage, 0.9V Max.

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Ultra Low Profile Package

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LP4K-7 DN 7 8 3000

DMN2005LP4K-7B DN 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Bottom View

Equivalent Circuit

Top View

Pin-Out

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED

DN = Product Type Marking Code

DN DN

DMN2005LP4K-7 DMN2005LP4K-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

Summary of content (6 pages)

PAGE 1
DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMN2005LP4K Maximum Ratings (@TA = 25°C unless otherwise specified.
PAGE 3
DMN2005LP4K 1.5 2.0 VGS = 4.5V VDS = 5V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 T A = 150°C TA = 125°C T A = 85°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 VGS = 1.8V VGS = 2.5V 0.4 VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5.V ID = 500mA 1.0 0.8 0.
PAGE 4
DMN2005LP4K 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 T A = 25°C 0.8 0.4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 60 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 5
DMN2005LP4K Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN2005LP4K Document number: DS30799 Rev. 6 - 2 5 of 6 www.diodes.
PAGE 6
DMN2005LP4K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).